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FDS7088SN3
August 2004
FDS7088SN3
30V N-Channel PowerTrench SyncFETTM
General Description
The FDS7088SN3 is designed to replace a single SO-8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7088SN3 includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS7088SN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7088N3 in parallel with a Schottky diode.
Features
* 21 A, 30 V RDS(ON) = 4.0 m @ VGS = 10 V RDS(ON) = 4.9 m @ VGS = 4.5 V * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Fast switching * FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
* DC/DC converter * Motor drives
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W C
21 60 3.0 1.7 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
C/W C/W
Package Marking and Ordering Information
Device Marking FDS7088SN3 Device FDS7088SN3 Reel Size 13'' Tape width 12mm Quantity 2500 units
2004 Fairchild Semiconductor Corporation
FDS7088SN3 Rev B (W)
FDS7088SN3
Electrical Characteristics
Symbol Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
TA = 25C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) VGS = 0 V, ID = 1 mA ID = 15 mA, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 1 mA ID = 15 mA, Referenced to 25C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 10 V, ID = 21 A ID = 19 A ID = 21 A, TJ = 125C ID = 21 A 1 1.5 -3 3.4 4.0 5 85 4.0 4.9 30 28 500 100 3 V mV/C A nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance
V mV/C m
gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd IS VSD tRR QRR
S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
3230 890 300 1.6
pF pF pF 32 34 72 53 80 44 ns ns ns ns nC nC nC nC
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
20 21 45 33
Total Gate Charge at VGS=10V Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, VDD = 15 V, VGS = 5 V
ID = 10 A ID = 10 A
57 31 8 10
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Schottky Diode Forward Current Drain-Source Schottky Diode VGS = 0 V, IS = 4.3 A (Note 2) Forward Voltage IF = 21 A Reverse Recovery Time diF/dt = 300 A/us Reverse Recovery Charge 4.3 0.4 28 29 0.7 A V ns nC
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40C/W when mounted on a 1in2 pad of 2 oz copper
b)
85C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS7088SN3 Rev B (W)
FDS7088SN3
Typical Characteristics
60
VGS = 10V 6.0V
2 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 3.5V 4.0V 4.5V 5.0V 6.0V 10V VGS = 3.5V
ID, DRAIN CURRENT (A)
40
4.5V
20
2.5V
0 0 0.25 0.5 0.75 VDS, DRAIN-SOURCE VOLTAGE (V) 1
0
10
20 30 40 ID, DRAIN CURRENT (A)
50
60
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.012 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 21A VGS = 10V 1.4
ID = 10.5A
0.01
1.2
0.008
TA = 125 C
o
1
0.006
0.8
0.004
TA = 25 C
o
0.6 -50 -25 0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C) 100 125
0.002 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 3. On-Resistance Variation withTemperature.
60
VDS = 5V IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 10 1 0.1 0.01 0.001 0.0001 TA = 125 C 25 C -55 C
o o o
50 ID, DRAIN CURRENT (A) 40 30
TA =125 C
o
20 10 0 1.5 1.75
-55 C
o
25oC
2 2.25 2.5 2.75 VGS, GATE TO SOURCE VOLTAGE (V)
3
0
0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V)
1
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7088SN3 Rev B (W)
FDS7088SN3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 21A 8 20V CAPACITANCE (pF) VDS = 10V 6 15V 4 4000 5000 f = 1MHz VGS = 0 V
3000
Ciss
2000 Coss 1000 Crss
2
0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60
0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
100
1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25 C
o
100s
40
SINGLE PULSE RJA = 85C/W TA = 25C
10
30
1
20
0.1
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.01
0.1
1 10 t1, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1.00
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
0.10
0.1 0.05 0.02
RJA(t) = r(t) * RJA RJA = 85 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01
0.01
SINGLE PULSE
0.00 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS7088SN3 Rev B (W)
FDS7088SN3
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7088SN3. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
0.1 IDSS, REVERSE LEAKAGE CURRENT (A)
o
TA = 125 C
0.01
0.001
TA = 100oC
0.08A/div
0.0001
TA = 25oC
0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30
12.5 nS/div
Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature
Figure 12. FDS7088SN3 SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS7088N3).
0.08A/div
12.5 nS/div
Figure 13. Non-SyncFET (FDS7088N3) body diode reverse recovery characteristic.
FDS7088SN3 Rev B (W)
FDS7088SN3
Dimensional Outline and Pad Layout
FDS7088SN3 Rev B (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

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